Samsung News

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From Samsung:

New 'PM1643' is built on latest 512Gb V-NAND to offer the most advanced storage, featuring industry-first 1TB NAND flash package, 40GB of DRAM, new controller and custom software

Korea on February 20, 2018 – Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry’s largest capacity Serial Attached SCSI (SAS) solid state drive (SSD) – the PM1643 – for use in next-generation enterprise storage systems. Leveraging Samsung’s latest V-NAND technology with 64-layer, 3-bit 512-gigabit (Gb) chips, the 30.72 terabyte (TB) drive delivers twice the capacity and performance of the previous 15.36TB high-capacity lineup introduced in March 2016.

This breakthrough was made possible by combining 32 of the new 1TB NAND flash packages, each comprised of 16 stacked layers of 512Gb V-NAND chips. These super-dense 1TB packages allow for approximately 5,700 5-gigabyte (GB), full HD movie files to be stored within a mere 2.5-inch storage device.

In addition to the doubled capacity, performance levels have risen significantly and are nearly twice that of Samsung’s previous generation high-capacity SAS SSD. Based on a 12Gb/s SAS interface, the new PM1643 drive features random read and write speeds of up to 400,000 IOPS and 50,000 IOPS, and sequential read and write speeds of up to 2,100MB/s and 1,700 MB/s, respectively. These represent approximately four times the random read performance and three times the sequential read performance of a typical 2.5-inch SATA SSD*.

“With our launch of the 30.72TB SSD, we are once again shattering the enterprise storage capacity barrier, and in the process, opening up new horizons for ultra-high capacity storage systems worldwide,” said Jaesoo Han, executive vice president, Memory Sales & Marketing Team at Samsung Electronics. “Samsung will continue to move aggressively in meeting the shifting demand toward SSDs over 10TB and at the same time, accelerating adoption of our trail-blazing storage solutions in a new age of enterprise systems.”

Samsung reached the new capacity and performance enhancements through several technology progressions in the design of its controller, DRAM packaging and associated software. Included in these advancements is a highly efficient controller architecture that integrates nine controllers from the previous high-capacity SSD lineup into a single package, enabling a greater amount of space within the SSD to be used for storage. The PM1643 drive also applies Through Silicon Via (TSV) technology to interconnect 8Gb DDR4 chips, creating 10 4GB TSV DRAM packages, totaling 40GB of DRAM. This marks the first time that TSV-applied DRAM has been used in an SSD.

Complementing the SSD’s hardware ingenuity is enhanced software that supports metadata protection as well as data retention and recovery from sudden power failures, and an error correction code (ECC) algorithm to ensure high reliability and minimal storage maintenance. Furthermore, the SSD provides a robust endurance level of one full drive write per day (DWPD), which translates into writing 30.72TB of data every day over the five-year warranty period without failure. The PM1643 also offers a mean time between failures (MTBF) of two million hours.

Samsung started manufacturing initial quantities of the 30.72TB SSDs in January and plans to expand the lineup later this year – with 15.36TB, 7.68TB, 3.84TB, 1.92TB, 960GB and 800GB versions – to further drive the growth of all-flash-arrays and accelerate the transition from hard disk drives (HDDs) to SSDs in the enterprise market. The wide range of models and much improved performance will be pivotal in meeting the growing storage needs in a host of market segments, including the government, financial services, healthcare, education, oil & gas, pharmaceutical, social media, business services, retail and communications sectors. Samsung reached the new capacity and performance enhancements through several technology progressions in the design of its controller, DRAM packaging and associated software. Included in these advancements is a highly efficient controller architecture that integrates nine controllers from the previous high-capacity SSD lineup into a single package, enabling a greater amount of space within the SSD to be used for storage. The PM1643 drive also applies Through Silicon Via (TSV) technology to interconnect 8Gb DDR4 chips, creating 10 4GB TSV DRAM packages, totaling 40GB of DRAM. This marks the first time that TSV-applied DRAM has been used in an SSD.

Complementing the SSD’s hardware ingenuity is enhanced software that supports metadata protection as well as data retention and recovery from sudden power failures, and an error correction code (ECC) algorithm to ensure high reliability and minimal storage maintenance. Furthermore, the SSD provides a robust endurance level of one full drive write per day (DWPD), which translates into writing 30.72TB of data every day over the five-year warranty period without failure. The PM1643 also offers a mean time between failures (MTBF) of two million hours.

Samsung started manufacturing initial quantities of the 30.72TB SSDs in January and plans to expand the lineup later this year – with 15.36TB, 7.68TB, 3.84TB, 1.92TB, 960GB and 800GB versions – to further drive the growth of all-flash-arrays and accelerate the transition from hard disk drives (HDDs) to SSDs in the enterprise market. The wide range of models and much improved performance will be pivotal in meeting the growing storage needs in a host of market segments, including the government, financial services, healthcare, education, oil & gas, pharmaceutical, social media, business services, retail and communications sectors.

* Compared to 2.5-inch Samsung SSD 850 EVO

From Samsung:

Samsung Electronics, the world leader in advanced memory technology, today unveiled the industry’s first removable memory cards based on the JEDEC Universal Flash Storage (UFS) 1.0 Card Extension Standard, for use in high-resolution mobile shooting devices such as DSLRs, 3D VR cameras, action cams and drones. Coming in a wide range of storage capacities including 256, 128, 64 and 32 gigabyte (GB), Samsung’s UFS cards are expected to bring a significant performance boost to the external memory storage market, allowing much more satisfying multimedia experiences.

“Our new 256GB UFS card will provide an ideal user experience for digitally-minded consumers and lead the industry in establishing the most competitive memory card solution,” said Jung-bae Lee, senior vice president, Memory Product Planning & Application Engineering, Samsung Electronics “By launching our new high-capacity, high-performance UFS card line-up, we are changing the growth paradigm of the memory card market to prioritize performance and user convenience above all.”

Samsung’s new 256GB UFS removable memory card - simply referred to as the UFS card will provide greatly improved user experiences, especially in high-resolution 3D gaming and high-resolution movie playback. It provides more than five times faster sequential read performance compared to that of a typical microSD card, reading sequentially at 530 megabytes per second (MB/s) which is similar to the sequential read speed of the most widely used SATA SSDs. With this UFS card, consumers have the ability to read a 5GB, Full-HD movie in approximately 10 seconds, compared to a typical UHS-1 microSD card, which would take over 50 seconds with 95MB/s of sequential reading speed. Also, at a random read rate of 40,000 IOPS, the 256GB card delivers more than 20 times higher random read performance compared to a typical microSD, which offers approximately 1,800 IOPS.

When it comes to writing, the new 256GB UFS card processes 35,000 random IOPS, which is 350 times higher than the 100 IOPs of a typical microSD card, and attains a 170MB/s sequential write speed, almost doubling the top-end microSD card speed. With these substantial performance improvements, the new 256GB UFS card significantly reduces multimedia data downloading time, photo thumbnail loading time and buffer clearing time in burst shooting mode, which, collectively, can be particularly beneficial to DSLR camera users. To shoot 24 large/extra fine JPEG photographs (1,120 megabyte (MB)-equivalent) continuously with a high-end DSLR camera, the 256GB UFS card takes less than seven seconds, compared to a UHS-1 microSD card which typically takes about 32 seconds, at 35MB/s.

To achieve the highest performance and most power-efficient data transport, the UFS card supports multiple commands with command queuing features and enables simultaneous reading and writing through the use of separately dedicated paths, doubling throughput.

As the leading memory storage provider, Samsung has been aggressive in preparing UFS solutions for the marketplace, while contributing to JEDEC standardization of the Universal Flash Storage 2.0 specification in September 2013 and the Universal Flash Storage (UFS) 1.0 Card Extension standard in March 2016. Following its introduction of the industry-first 128GB embedded UFS chip in January 2015, the company successfully launched a 256GB embedded UFS memory for high-end mobile devices in February of this year. As of earlier this month, Samsung also completed the Universal Flash Storage Association (UFSA)’s certification program that evaluates electrical and functional specifications for compatibility of a UFS card, and Samsung’s new UFS card products were approved as UFSA-certified UFS cards with the right to use the official UFS logo for the first time in the industry.

From Samsung:

Combined high performance and capacity, this memory card solution provides consumers with up to 12 hours of 4K UHD video storage

May 10, 2016 10:49 AM – SEOUL, South Korea – Samsung Electronics Co., Ltd., an expert provider of advanced memory solutions, today unveiled its newest memory card globally – the EVO Plus 256GB microSD card. The EVO Plus 256GB offers the highest capacity for a microSD card in its class, delivering fast speeds and an expanded memory storage for use in premium smartphones and tablets, 360-degree video recorders, action cameras, and drones. Consumers can now record up to 12 hours of 4K UHD video or 33 hours of Full HD videoon their mobile device or action camera without needing to change or replace the memory card, allowing them to experience more and worry less about running out of memory.

The EVO Plus 256GB raises the bar for capacity and performance of microSD cards thanks to Samsung’s advanced V-NAND technology, offering high read and write speeds of up to 95MB/s and 90MB/s, respectively. This level of performance will provide general consumers and professionals with superb user convenience for storing heavy-loaded, high-resolution photography and 4K video recording, as well as graphic intensive multimedia like virtual reality (VR) and gaming.

“With the upward trend of consumers using high-performance, high-capacity mobile devices, our new, V-NAND-based 256GB microSD card solution allows us to deliver the memory card consumers have been craving,” said Un-Soo Kim, Senior Vice President of Brand Product Marketing, Memory Business at Samsung Electronics. “Our EVO Plus 256GB microSD card, will provide consumers with large capacity, and high read and write speeds. We are excited to offer our customers convenient and seamless multimedia experiences when they access, store and share all of the content they create and capture.”

The EVO Plus 256GB microSD card provides advanced protection, capacity, and performance with long-term reliability needed to get the most out of today’s electronics, making it an ideal companion for high-end smartphones and tablets with a microSD slot, even in the most extreme conditions.

Samsung will offer the EVO Plus 256GB microSD card with a limited 10-year warranty in more than 50 countries, including the USA, Europe, China, and other regions starting in June 2016 for $249.99 (Manufacturer’s suggested retail price).